HAT2279H-EL-E
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- Mfr.Part #
- HAT2279H-EL-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 30A LFPAK
- Stock
- 10,913
- In Stock ：
- 10,913
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 4
- Factory Lead Time :
- 16 Weeks
- Fall Time (Typ) :
- 9.5 ns
- Number of Pins :
- 5
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 80V
- Pin Count :
- 5
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Power Dissipation-Max :
- 25W Tc
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 15A, 10V
- Turn On Delay Time :
- 9.5 ns
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Rise Time :
- 14.5ns
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn-Off Delay Time :
- 56 ns
- Published :
- 2006
- Current - Continuous Drain (Id) @ 25°C :
- 30A Ta
- Power Dissipation :
- 25W
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 30A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PSFM-G4
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 80V
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-100, SOT-669
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 3520pF @ 10V
- Number of Elements :
- 1
- Datasheets
- HAT2279H-EL-E
N-Channel Tape & Reel (TR) 12m Ω @ 15A, 10V ±20V 3520pF @ 10V 60nC @ 10V 80V SC-100, SOT-669
HAT2279H-EL-E Overview
A device's maximum input capacitance is 3520pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 56 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 80V.To operate this transistor, you need to apply a 80V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
HAT2279H-EL-E Features
a continuous drain current (ID) of 30A
the turn-off delay time is 56 ns
a 80V drain to source voltage (Vdss)
HAT2279H-EL-E Applications
There are a lot of Renesas Electronics America
HAT2279H-EL-E applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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