HAT2266H-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

ECCN Code :

EAR99

Number of Elements :

1

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

12m Ω @ 15A, 10V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

60V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Number of Terminations :

4

Terminal Position :

Single

Turn On Delay Time :

10 ns

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

30A

Turn-Off Delay Time :

50 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Radiation Hardening :

No

Package / Case :

SC-100, SOT-669

Fall Time (Typ) :

5.5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

5

Power Dissipation-Max :

23W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 10V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Power Dissipation :

23W

Pbfree Code :

yes

Number of Pins :

5

Factory Lead Time :

16 Weeks

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

60V

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G4

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2006

JESD-609 Code :

e4

Rise Time :

15ns

Vgs(th) (Max) @ Id :

2.5V @ 1mA