HAT2203C-EL-E

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.15 Ω

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

20 V

Number of Terminals :

6

Rds On (Max) @ Id, Vgs :

90mOhm @ 1A, 4.5V

Brand Name :

Renesas

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

2 A

Drain to Source Voltage (Vdss) :

20 V

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e6

FET Feature :

-

Number of Elements :

1

Pbfree Code :

yes

Subcategory :

FET General Purpose Power

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

1.8 nC @ 4.5 V

Manufacturer :

Renesas Electronics Corporation

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-F6

Vgs (Max) :

±12V

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

165 pF @ 10 V

Operating Temperature :

150°C

Reach Compliance Code :

Compliant

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Package / Case :

6-SMD, Flat Leads

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max (Abs) :

0.83 W

Supplier Device Package :

6-CMFPAK

Current - Continuous Drain (Id) @ 25°C :

2A (Ta)

Series :

-

Terminal Form :

Flat

Qualification Status :

Not Qualified

Pin Count :

6

Surface Mount :

yes

Vgs(th) (Max) @ Id :

1.4V @ 1mA

Product Status :

Obsolete

Power Dissipation (Max) :

830mW (Ta)

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Type :

N-Channel

Package :

Bulk