HAT2196C-EL-E

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

-

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PDSO-F6

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

Power Dissipation-Max (Abs) :

0.85 W

Package Shape :

RECTANGULAR

Brand Name :

Renesas

Vgs (Max) :

±12V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Feature :

-

Manufacturer :

Renesas Electronics Corporation

Transistor Application :

SWITCHING

Technology :

MOSFET (Metal Oxide)

Subcategory :

FET General Purpose Power

Supplier Device Package :

6-CMFPAK

Number of Terminals :

6

Package / Case :

6-SMD, Flat Leads

Number of Elements :

1

Drain-source On Resistance-Max :

0.093 Ω

JESD-609 Code :

e6

Terminal Position :

Dual

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

2.5A (Ta)

Operating Temperature :

150°C

DS Breakdown Voltage-Min :

20 V

Mounting Type :

Surface Mount

Product Status :

Obsolete

Input Capacitance (Ciss) (Max) @ Vds :

270 pF @ 10 V

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1.4V @ 1mA

Power Dissipation (Max) :

850mW (Ta)

Transistor Element Material :

SILICON

Package :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

2.8 nC @ 4.5 V

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

58mOhm @ 1.3A, 4.5V

Qualification Status :

Not Qualified

Pin Count :

6

Terminal Form :

Flat

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Drain Current-Max (Abs) (ID) :

2.5 A