HAT2192WP-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

25W Tc

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

10A

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.23Ohm

Vgs (Max) :

±30V

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Number of Terminations :

5

Pulsed Drain Current-Max (IDM) :

20A

Pbfree Code :

yes

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

250V

Power Dissipation :

25W

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Package / Case :

8-PowerWDFN

Drain to Source Voltage (Vdss) :

250V

Factory Lead Time :

16 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 25V

Number of Elements :

1

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

230m Ω @ 5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

JESD-30 Code :

R-XDSO-N5

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

10A Ta

ECCN Code :

EAR99

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

Published :

2001