HAT2174H-EL-E
- Mfr.Part #
- HAT2174H-EL-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- SC-100, SOT-669
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 20A LFPAK
- Stock
- 42,902
- In Stock :
- 42,902
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 2280pF @ 10V
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- 100V
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 20W Tc
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.03Ohm
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta
- Transistor Application :
- SWITCHING
- Current Rating :
- 20A
- Number of Pins :
- 5
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 8V 10V
- Time@Peak Reflow Temperature-Max (s) :
- 20
- Gate Charge (Qg) (Max) @ Vgs :
- 33.5nC @ 10V
- Pin Count :
- 5
- JESD-30 Code :
- R-PSSO-G4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 10A, 10V
- Package / Case :
- SC-100, SOT-669
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 20A
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Pulsed Drain Current-Max (IDM) :
- 80A
- Terminal Position :
- Single
- Factory Lead Time :
- 16 Weeks
- Turn-Off Delay Time :
- 31 ns
- Number of Terminations :
- 4
- Rise Time :
- 13ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2005
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 5.5 ns
- FET Type :
- N-Channel
- Turn On Delay Time :
- 18 ns
- Operating Temperature :
- 150°C TJ
- Case Connection :
- DRAIN
- Datasheets
- HAT2174H-EL-E

N-Channel Tape & Reel (TR) 27m Ω @ 10A, 10V ±20V 2280pF @ 10V 33.5nC @ 10V SC-100, SOT-669
HAT2174H-EL-E Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2280pF @ 10V.This device conducts a continuous drain current (ID) of 20A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 31 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 80A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 8V 10V volts (8V 10V).
HAT2174H-EL-E Features
a continuous drain current (ID) of 20A
the turn-off delay time is 31 ns
based on its rated peak drain current 80A.
HAT2174H-EL-E Applications
There are a lot of Renesas Electronics America
HAT2174H-EL-E applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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