HAT2169H-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

50A

Transistor Application :

SWITCHING

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

30W Tc

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

9.5 ns

JESD-609 Code :

e4

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

50A Ta

Time@Peak Reflow Temperature-Max (s) :

20

Transistor Element Material :

SILICON

Number of Pins :

5

Pin Count :

5

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 4.5V

Published :

2005

JESD-30 Code :

R-PSSO-G4

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Case Connection :

DRAIN

Package / Case :

SC-100, SOT-669

Number of Terminations :

4

Turn-Off Delay Time :

55 ns

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

200A

Lead Free :

Lead Free

Turn On Delay Time :

15 ns

Number of Channels :

1

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

ECCN Code :

EAR99

Terminal Form :

Gull wing

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 25A, 10V

Operating Temperature :

150°C TJ

Drain to Source Breakdown Voltage :

40V

Factory Lead Time :

16 Weeks

Max Junction Temperature (Tj) :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

6650pF @ 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Drain-source On Resistance-Max :

0.006Ohm

Power Dissipation :

30W

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Rise Time :

64ns

Height :

1.1mm