HAT2166H-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 22.5A, 10V

Pin Count :

5

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

25W

Time@Peak Reflow Temperature-Max (s) :

20

Radiation Hardening :

No

FET Type :

N-Channel

Fall Time (Typ) :

7.5 ns

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

JESD-30 Code :

R-PSSO-G4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SC-100, SOT-669

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Turn On Delay Time :

12 ns

Input Capacitance (Ciss) (Max) @ Vds :

4400pF @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Rise Time :

35ns

Published :

2005

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Number of Terminations :

4

Continuous Drain Current (ID) :

45A

Case Connection :

DRAIN

Number of Pins :

5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Pbfree Code :

yes

Power Dissipation-Max :

25W Tc

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

45A Ta

Turn-Off Delay Time :

55 ns

Terminal Form :

Gull wing

Terminal Position :

Single

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Factory Lead Time :

16 Weeks

Vgs (Max) :

±20V