HAT2165H-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Package / Case :

SC-100, SOT-669

Operating Mode :

ENHANCEMENT MODE

Published :

2005

Turn-Off Delay Time :

60 ns

Turn On Delay Time :

13 ns

JESD-30 Code :

R-PSSO-G4

Rise Time :

65ns

Pbfree Code :

yes

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

220A

Terminal Position :

Single

Contact Plating :

Gold

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

Time@Peak Reflow Temperature-Max (s) :

20

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 27.5A, 10V

Factory Lead Time :

16 Weeks

Mount :

Surface Mount

Power Dissipation-Max :

30W Tc

FET Type :

N-Channel

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 4.5V

Pin Count :

5

Continuous Drain Current (ID) :

55A

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

5

Fall Time (Typ) :

9.5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e4

Power Dissipation :

30W

DS Breakdown Voltage-Min :

30V

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

5180pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

55A Ta

Number of Terminations :

4

Transistor Application :

SWITCHING