HAT2164H-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

20

Number of Terminations :

4

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

60A Ta

JESD-30 Code :

R-PSSO-G4

Mount :

Surface Mount

Rise Time :

60ns

Pulsed Drain Current-Max (IDM) :

240A

Pin Count :

5

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Package / Case :

SC-100, SOT-669

Case Connection :

DRAIN

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

30V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Turn-Off Delay Time :

65 ns

Fall Time (Typ) :

15 ns

Published :

2005

Terminal Form :

Gull wing

Vgs (Max) :

±20V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Number of Pins :

5

Continuous Drain Current (ID) :

60A

Contact Plating :

Gold

Power Dissipation-Max :

30W Tc

Terminal Position :

Single

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Current Rating :

60A

Drain-source On Resistance-Max :

0.0044Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

18 ns

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

3.1m Ω @ 30A, 10V

JESD-609 Code :

e4

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

7600pF @ 10V