HAT2160H-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

30W Tc

Pulsed Drain Current-Max (IDM) :

240A

Published :

2005

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.3V @ 1mA

Pin Count :

5

JESD-30 Code :

R-PSSO-G4

Turn On Delay Time :

17 ns

Transistor Application :

SWITCHING

Terminal Position :

Single

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

7750pF @ 10V

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 30A, 10V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

60A Ta

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Turn-Off Delay Time :

65 ns

Contact Plating :

Copper, Gold, Tin

Transistor Element Material :

SILICON

Rise Time :

60ns

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 4.5V

Package / Case :

SC-100, SOT-669

Continuous Drain Current (ID) :

60A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

5

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Fall Time (Typ) :

15 ns

Number of Terminations :

4

Factory Lead Time :

16 Weeks

Mounting Type :

Surface Mount