HAT2141H-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

4

Fall Time (Typ) :

10 ns

Power Dissipation-Max :

20W Tc

Factory Lead Time :

16 Weeks

Pbfree Code :

yes

Number of Pins :

5

Drain to Source Voltage (Vdss) :

100V

Package / Case :

SC-100, SOT-669

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Terminal Position :

Single

Turn-Off Delay Time :

70 ns

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

27.5m Ω @ 7.5A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Turn On Delay Time :

22 ns

Drain-source On Resistance-Max :

0.032Ohm

Continuous Drain Current (ID) :

15A

Pulsed Drain Current-Max (IDM) :

60A

JESD-30 Code :

R-PSSO-G4

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

20

Transistor Element Material :

SILICON

Mount :

Surface Mount

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 10V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Published :

2005

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Rise Time :

13ns

Operating Mode :

ENHANCEMENT MODE

Pin Count :

5

Drive Voltage (Max Rds On,Min Rds On) :

7V 10V

Operating Temperature :

150°C TJ