HAT2099H-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

26 ns

Current - Continuous Drain (Id) @ 25°C :

50A Ta

Power Dissipation :

30W

Transistor Application :

SWITCHING

Turn On Delay Time :

26 ns

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

85 ns

Package / Case :

SC-100, SOT-669

Number of Elements :

1

Radiation Hardening :

No

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

4

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 25A, 10V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

20

Power Dissipation-Max :

30W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Lead Free :

Lead Free

Terminal Form :

Gull wing

Rise Time :

60ns

Continuous Drain Current (ID) :

50A

Voltage - Rated DC :

30V

Pulsed Drain Current-Max (IDM) :

200A

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

4750pF @ 10V

Pin Count :

5

Factory Lead Time :

16 Weeks

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G4

Published :

2005

Mount :

Surface Mount

Number of Pins :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0073Ohm

Pbfree Code :

yes

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Current Rating :

50A