HAT2088R-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

20

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Rds On (Max) @ Id, Vgs :

440m Ω @ 1A, 10V

Lead Free :

Lead Free

Fall Time (Typ) :

11 ns

FET Type :

N-Channel

Published :

2005

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Current Rating :

2A

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Power Dissipation-Max :

2.5W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Power Dissipation :

2.5W

Continuous Drain Current (ID) :

2A

Rise Time :

8.5ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

16 Weeks

Number of Terminations :

8

Turn-Off Delay Time :

48 ns

Drain-source On Resistance-Max :

0.44Ohm

Terminal Position :

Dual

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Number of Pins :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Voltage - Rated DC :

200V

Pin Count :

8

Current - Continuous Drain (Id) @ 25°C :

2A Ta

Turn On Delay Time :

19 ns

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

2A