HAT1072H-EL-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 20A, 10V

Drain-source On Resistance-Max :

0.0077Ohm

Pbfree Code :

yes

Number of Pins :

5

Published :

2005

Vgs (Max) :

+10V, -20V

Pin Count :

5

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Continuous Drain Current (ID) :

40A

Fall Time (Typ) :

140 ns

Power Dissipation :

30W

ECCN Code :

EAR99

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G4

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

10V

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

9500pF @ 10V

Radiation Hardening :

No

Power Dissipation-Max :

30W Tc

Mounting Type :

Surface Mount

Factory Lead Time :

16 Weeks

Turn-Off Delay Time :

305 ns

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

Rise Time :

60ns

Gate Charge (Qg) (Max) @ Vgs :

155nC @ 10V

Terminal Position :

Single

Number of Terminations :

4

DS Breakdown Voltage-Min :

30V

Turn On Delay Time :

28 ns

Current - Continuous Drain (Id) @ 25°C :

40A Ta

Operating Temperature :

150°C TJ

Transistor Application :

SWITCHING

FET Type :

P-Channel

Package / Case :

SC-100, SOT-669