GT52N10D5

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

100 V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Product Status :

Active

Power Dissipation (Max) :

79W (Tc)

FET Feature :

-

Technology :

MOSFET (Metal Oxide)

Series :

-

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Gate Charge (Qg) (Max) @ Vgs :

44.5 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

71A (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Package / Case :

DFN8L-5×6

Operating Temperature :

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs :

7.5mOhm @ 50A, 10V

Supplier Device Package :

8-DFN (5.2x5.86)

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2626 pF @ 50 V

Vgs(th) (Max) @ Id :

2.5V @ 250μA