GT095N10S

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain to Source Voltage (Vdss) :

100 V

FET Type :

N-Channel

Technology :

MOSFET (Metal Oxide)

Rds On (Max) @ Id, Vgs :

9.5mOhm @ 20A, 10V

Product Status :

Active

Power Dissipation (Max) :

8W (Tc)

Vgs (Max) :

±20V

Series :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Current - Continuous Drain (Id) @ 25°C :

21A (Tc)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

29.4 nC @ 10 V

Supplier Device Package :

8-SOP

Input Capacitance (Ciss) (Max) @ Vds :

2131 pF @ 50 V

Vgs(th) (Max) @ Id :

2.6V @ 250μA

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;