GN2470K4-G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

RoHS Status :

ROHS3 Compliant

Length :

6.73mm

Supplier Device Package :

TO-252, (D-Pak)

Vce(on) (Max) @ Vge, Ic :

5V @ 13V, 3A

Number of Terminations :

2

Pin Count :

2 +Tab

Collector Emitter Breakdown Voltage :

700V

Transistor Application :

POWER CONTROL

Test Condition :

-

Maximum Operating Temperature :

+ 150 C

Voltage - Collector Emitter Breakdown (Max) :

700 V

Product Status :

Active

Brand :

Microchip Technology

Technology :

Si

Td (on/off) @ 25°C :

8ns/20ns

Subcategory :

IGBTs

Gate-Emitter Voltage-Max :

20 V

Number of Terminals :

2

Collector Current (DC) :

1(A)

Switching Energy :

-

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Product Category :

IGBT Transistors

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

700V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Position :

Single

Current - Collector Pulsed (Icm) :

3.5A

Mounting Type :

Surface Mount

Operating Temperature Classification :

Military

JESD-30 Code :

R-PSSO-G2

Power Dissipation Ambient-Max :

2.5 W

Input Type :

Standard

Gate-Emitter Thr Voltage-Max :

3.5 V

Package Type :

DPAK

Surface Mount :

yes

RoHS :

Details

Rad Hardened :

No

Mounting Style :

SMD/SMT

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Published :

2008

Mounting :

Surface Mount

ECCN Code :

EAR99

IGBT Type :

-

Configuration :

Single

Package Shape :

RECTANGULAR

JEDEC-95 Code :

TO-252AA

Collector-Emitter Voltage :

700(V)

Power - Max :

2.5 W

Max Power Dissipation :

2.5W

Operating Temperature (Min) :

-55C

Minimum Operating Temperature :

- 55 C

Gate to Emitter Voltage (Max) :

±20(V)

Fall Time-Max (tf) :

12000 ns

Package :

Tape and Reel (TR)

Radiation Hardening :

No

Height :

2.39mm

Number of Pins :

3

Max Collector Current :

1A

Case Connection :

COLLECTOR

Width :

6.1mm

Collector Current-Max (IC) :

1 A

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

2.5W

Number of Elements :

1

Current - Collector (Ic) (Max) :

1 A

Series :

-

Factory Lead Time :

14 Weeks

Product Type :

IGBT Transistors

Collector-Emitter Voltage-Max :

700 V

Transistor Element Material :

SILICON

Operating Temperature (Max) :

150C

Qualification Status :

Not Qualified

Base Product Number :

GN2470

Channel Type :

N

Continuous Collector Current :

1A

Terminal Form :

Gull wing

Manufacturer :

Microchip

Reach Compliance Code :

Compliant