G7P03L

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Power Dissipation (Max) :

1.9W (Tc)

FET Feature :

-

Gate Charge (Qg) (Max) @ Vgs :

29 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

7A (Tc)

Supplier Device Package :

SOT-23-3

Power Dissipation-Max (Ta=25°C) :

1.9W

Rds On (Max) @ Id, Vgs :

20.5mΩ @ 2A,10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Mounting Type :

Surface Mount

Product Status :

Active

Vgs(th) (Max) @ Id :

1.1V @ 250uA

Package / Case :

SOT-23-3L

FET Type :

P Channel

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1500 pF @ 15 V

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Continuous Drain Current (Id) @ 25°C :

7A

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Series :

-

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Technology :

MOSFET (Metal Oxide)