G70N04T

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

104W (Tc)

Technology :

MOSFET (Metal Oxide)

Product Status :

Active

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Package :

Tube

Rds On (Max) @ Id, Vgs :

7mOhm @ 30A, 10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

4010 pF @ 20 V

Gate Charge (Qg) (Max) @ Vgs :

50 nC @ 10 V

Supplier Device Package :

TO-220

Mounting Type :

Through Hole

FET Feature :

-

Current - Continuous Drain (Id) @ 25°C :

70A (Tc)

Package / Case :

TO-220-3

Drain to Source Voltage (Vdss) :

40 V

Series :

-