G3R75MT12J
- Mfr.Part #
- G3R75MT12J
- Manufacturer
- GeneSiC Semiconductor
- Package / Case
- QFN
- Datasheet
- Download
- Description
- SIC MOSFET N-CH 42A TO263-7
- Stock
- 2,490
- In Stock :
- 2,490
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- Manufacturer :
- GeneSiC Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Brand :
- GeneSiC Semiconductor
- Product :
- MOSFET
- Mounting Type :
- Surface Mount
- Series :
- G3R
- Rds On (Max) @ Id, Vgs :
- 90mOhm @ 20A, 15V
- Symmetry Max :
- 55(%)
- Packaging :
- Bulk
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Manufacturer :
- GeneSiC Semiconductor
- Current - Continuous Drain (Id) @ 25°C :
- 42A (Tc)
- Type :
- Clock Oscillator
- Subcategory :
- MOSFETs
- Product Type :
- MOSFET
- Gate Charge (Qg) (Max) @ Vgs :
- 54 nC @ 15 V
- Base Product Number :
- G3R75
- Operating Supply Voltage (Max) :
- 3.63(V)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1560 pF @ 800 V
- Transistor Polarity :
- N-Channel
- Channel Type :
- N Channel
- Transistor Type :
- MOSFET
- Drive Voltage (Max Rds On, Min Rds On) :
- 15V
- Technology :
- SiC
- Power Dissipation (Max) :
- 224W (Tc)
- Continuous Drain Current Id :
- 42A
- Vgs(th) (Max) @ Id :
- 2.69V @ 7.5mA
- Minimum Operating Temperature :
- - 55 C
- RoHS :
- Details
- FET Type :
- N-Channel
- Standard Frequency :
- 125
- Package / Case :
- QFN
- Channel Mode :
- Enhancement
- Vgs (Max) :
- ±15V
- Product Status :
- Active
- Package :
- Tube
- Supplier Device Package :
- TO-263-7
- Power Dissipation :
- 224W
- Programmable :
- No
- Configuration :
- Single
- Operating Supply Voltage (Min) :
- 2.25(V)
- Maximum Operating Temperature :
- + 175 C
- Rise Time :
- 12 ns
- Frequency Stability :
- ±25(ppm)
- Product Category :
- MOSFET
- FET Feature :
- -
- Drain to Source Voltage (Vdss) :
- 1200 V
- Operating Temp Range :
- -20C to 70C
- Mounting Style :
- SMD/SMT
- Number of Channels :
- 1 Channel
- Datasheets
- G3R75MT12J
SiC N-Channel Bulk 90mOhm @ 20A, 15V ±15V 1560 pF @ 800 V 54 nC @ 15 V 1200 V QFN
G3R75MT12J Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1560 pF @ 800 V is its maximum input capacitance.For this transistor to work, a voltage 1200 V is required between drain and source (Vdss).
G3R75MT12J Features
a 1200 V drain to source voltage (Vdss)
G3R75MT12J Applications
There are a lot of GeneSiC Semiconductor
G3R75MT12J applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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|---|---|---|---|
| G3R75MT12D | GeneSiC Semiconductor | 6,639 | SIC MOSFET N-CH 41A TO247-3 |
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