G30N04D3

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

8-DFN (3.15x3.05)

Power Dissipation-Max (Ta=25°C) :

19.8W Tc

Current - Continuous Drain (Id) @ 25°C :

30A (Tc)

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

40V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Product Status :

Active

Technology :

MOSFET (Metal Oxide)

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

FET Type :

N Channel

Vgs (Max) :

±20V

Series :

-

Rds On (Max) @ Id, Vgs :

95mΩ @ 20A,10V

FET Feature :

Standard

Input Capacitance (Ciss) (Max) @ Vds :

1780 pF @ 20 V

Vgs(th) (Max) @ Id :

2.5V @ 250uA

Package / Case :

DFN3×3-8L

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 10 V

Power Dissipation (Max) :

19.8W (Tc)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Continuous Drain Current (Id) @ 25°C :

30A Tc