G3035

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

1.4W (Tc)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Series :

-

Vgs(th) (Max) @ Id :

2V @ 250μA

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

30 V

FET Type :

P-Channel

Operating Temperature :

-55°C ~ 150°C (TJ)

Supplier Device Package :

SOT-23

Gate Charge (Qg) (Max) @ Vgs :

13 nC @ 10 V

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

FET Feature :

-

Rds On (Max) @ Id, Vgs :

59mOhm @ 4A, 10V

Product Status :

Active

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Technology :

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds :

650 pF @ 15 V

Current - Continuous Drain (Id) @ 25°C :

4.6A (Tc)

Vgs (Max) :

±20V