G20P10KE

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

70 nC @ 10 V

Mounting Type :

Surface Mount

Supplier Device Package :

TO-252

FET Type :

P-Channel

Power Dissipation (Max) :

69W (Tc)

Product Status :

Active

FET Feature :

-

Drain to Source Voltage (Vdss) :

100 V

Technology :

MOSFET (Metal Oxide)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

3354 pF @ 50 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

20A (Tc)

Rds On (Max) @ Id, Vgs :

116mOhm @ 16A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA