G15N10C

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Series :

-

Product Status :

Active

Operating Temperature :

-55°C ~ 150°C (TJ)

Gate Charge (Qg) (Max) @ Vgs :

22 nC @ 10 V

Technology :

MOSFET (Metal Oxide)

Package / Case :

TO-252

Rds On (Max) @ Id, Vgs :

85mΩ @ 4.5A,10V

FET Type :

N Channel

Vgs (Max) :

±20V

RoHS Status :

RoHS Compliant

Supplier Device Package :

TO-252

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

15A (Tc)

Continuous Drain Current (Id) @ 25°C :

15A Tc

Power Dissipation-Max (Ta=25°C) :

28W Tc

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

FET Feature :

-

Power Dissipation (Max) :

42W (Tc)

Vgs(th) (Max) @ Id :

2.6V @ 250uA