G12P10K

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

100V

Supplier Device Package :

TO-252 (DPAK)

Vgs(th) (Max) @ Id :

3V @ 250uA

Product Status :

Active

FET Type :

P Channel

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

33 nC @ 10 V

Power Dissipation (Max) :

57W

Continuous Drain Current (Id) @ 25°C :

12A Tc

Package / Case :

TO-252

Current - Continuous Drain (Id) @ 25°C :

12A

Vgs (Max) :

±20V

Power Dissipation-Max (Ta=25°C) :

40W Tc

Technology :

MOSFET (Metal Oxide)

Operating Temperature :

-55°C ~ 150°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds :

1720 pF @ 50 V

Rds On (Max) @ Id, Vgs :

200mΩ @ 6A,10V