G11S

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

47 nC @ 10 V

Product Status :

Active

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

Series :

G

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

FET Feature :

-

Vgs (Max) :

±12V

Input Capacitance (Ciss) (Max) @ Vds :

2455 pF @ 10 V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Technology :

MOSFET (Metal Oxide)

Mounting Type :

Surface Mount

Power Dissipation (Max) :

3.3W (Tc)

Supplier Device Package :

8-SOP

FET Type :

P-Channel

Rds On (Max) @ Id, Vgs :

18.4mOhm @ 1A, 4.5V

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;