G110N06K

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

113 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

110A (Tc)

Product Status :

Active

FET Feature :

-

Packaging :

Tape and Reel (TR)

Technology :

MOSFET (Metal Oxide)

Supplier Device Package :

TO-252

Power Dissipation (Max) :

160W (Tc)

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

6.4mΩ @ 40A,10V

FET Type :

N Channel

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs (Max) :

±20V

Package / Case :

TO-252

Vgs(th) (Max) @ Id :

2V @ 250uA

Series :

-

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Input Capacitance (Ciss) (Max) @ Vds :

5538 pF @ 25 V

Power Dissipation-Max (Ta=25°C) :

120W Tc

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Drain to Source Voltage (Vdss) :

55V

Continuous Drain Current (Id) @ 25°C :

110A Tc

Mounting Type :

Surface Mount