G1006LE

Manufacturer :

Goford Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (Id) @ 25°C :

3A Tc

Input Capacitance (Ciss) (Max) @ Vds :

622 pF @ 50 V

Packaging :

Tape and Reel (TR)

Power Dissipation (Max) :

1.5W (Tc)

Vgs(th) (Max) @ Id :

2.2V @ 250uA

Rds On (Max) @ Id, Vgs :

150mΩ @ 3A,10V

Technology :

MOSFET (Metal Oxide)

Package :

Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

3A (Tc)

Gate Charge (Qg) (Max) @ Vgs :

18.2 nC @ 10 V

Product Status :

Active

Supplier Device Package :

SOT-23-3

Power Dissipation-Max (Ta=25°C) :

1.5W Tc

FET Type :

N Channel

RoHS Status :

RoHS Compliant

Package / Case :

SOT-23-3L

FET Feature :

-

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Series :

-