FZ400R65KE3NOSA1
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- Mfr.Part #
- FZ400R65KE3NOSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MOD 6500V 800A 8350W
- Stock
- 17,769
- In Stock ：
- 17,769
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Package / Case :
- Module
- Factory Lead Time :
- 20 Weeks
- Collector Emitter Voltage (VCEO) :
- 6.5kV
- Operating Temperature :
- -50°C~125°C
- Vce(on) (Max) @ Vge, Ic :
- 3.4V @ 15V, 400A
- RoHS Status :
- Non-RoHS Compliant
- Halogen Free :
- Not Halogen Free
- Power - Max :
- 8350W
- Input Capacitance (Cies) @ Vce :
- 110nF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2002
- Voltage - Collector Emitter Breakdown (Max) :
- 6500V
- Current - Collector (Ic) (Max) :
- 800A
- Input :
- Standard
- Element Configuration :
- Dual
- Max Collector Current :
- 400A
- Lead Free :
- Contains Lead
- Current - Collector Cutoff (Max) :
- 5mA
- Pbfree Code :
- No
- Mount :
- Screw
- ECCN Code :
- EAR99
- Number of Pins :
- 7
- Configuration :
- Half Bridge
- Mounting Type :
- Chassis Mount
- NTC Thermistor :
- No
- Datasheets
- FZ400R65KE3NOSA1
FZ400R65KE3NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FZ400R65KE3NOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.
FZ400R65KE3NOSA1 Applications
· Medium voltage converters
· Traction drives
FZ400R65KE3NOSA1 Features
· Low VcEsat
Mechanical Features
· AlSiC base plate for increased thermal cycling capability
*Extended storage temperature down to Tstg= -55 °℃
· Package with CTI>600
· Package with enhanced insulation of 10.4kV AC10s
· High creepage and clearance distances
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