FZ1200R33KF2CNOSA2
- Mfr.Part #
- FZ1200R33KF2CNOSA2
- Manufacturer
- Infineon Technologies
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MODULE 3300V 2000A
- Stock
- 16,183
- In Stock :
- 16,183
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Modules
- Current - Collector Cutoff (Max) :
- 12mA
- Input Capacitance (Cies) @ Vce :
- 150nF @ 25V
- Vce(on) (Max) @ Vge, Ic :
- 4.25V @ 15V, 1.2kA
- Current - Collector (Ic) (Max) :
- 2000A
- Input :
- Standard
- Power - Max :
- 14500W
- NTC Thermistor :
- No
- Configuration :
- Full Bridge
- Mounting Type :
- Chassis Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 3300V
- Operating Temperature :
- -40°C~125°C
- Package / Case :
- Module
- Datasheets
- FZ1200R33KF2CNOSA2
FZ1200R33KF2CNOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at
FZ1200R33KF2CNOSA2 Description
FZ1200R33KF2CNOSA2 is a 3300v IGBT-Modules. The FZ1200R33KF2CNOSA2 can be applied in Automotive, Hybrid, electric & powertrain systems, Communications equipment, Broadband fixed line access, Enterprise systems, and Enterprise machine applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FZ1200R33KF2CNOSA2 is in the tray package with 14.5kW Power dissipation.
FZ1200R33KF2CNOSA2 Features
Collector-emitter voltage Tvj = 25°C: 3300v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 2000A
Repetitive peak collector current Tp = 1 ms: 2400A
Total power dissipation Tc = 25°C: 14.5kW
Gate-emitter peak voltage: ±20V
FZ1200R33KF2CNOSA2 Applications
Automotive
Hybrid, electric & powertrain systems
Communications equipment
Broadband fixed line access
Enterprise systems
Enterprise machine
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