FT150R12KE3G_B4

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Modules

Current - Collector Cutoff (Max) :

5mA

Collector Emitter Voltage (VCEO) :

1.2kV

RoHS Status :

RoHS Compliant

Turn On Time :

350 ns

Terminal Finish :

TIN LEAD

Number of Pins :

39

Configuration :

Three Phase Inverter

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

NTC Thermistor :

yes

Case Connection :

Isolated

Power Dissipation-Max (Abs) :

700W

Number of Terminations :

39

Mount :

Screw

Radiation Hardening :

No

Voltage - Collector Emitter Breakdown (Max) :

1200V

Turn Off Time-Nom (toff) :

850 ns

Vce(on) (Max) @ Vge, Ic :

2.15V @ 15V, 150A

Mounting Type :

Chassis Mount

Terminal Position :

UPPER

Input :

Standard

Operating Temperature :

150°C TJ

Number of Elements :

3

Terminal Form :

UNSPECIFIED

Gate-Emitter Voltage-Max :

20V

VCEsat-Max :

2.15 V

Transistor Application :

POWER CONTROL

Pin Count :

39

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Input Capacitance (Cies) @ Vce :

10.5nF @ 25V

Polarity/Channel Type :

N-Channel

Package / Case :

Module

Power - Max :

700W

Max Collector Current :

200A

JESD-609 Code :

e0