FQT5P10TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Drain Current-Max (Abs) (ID) :

1A

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Resistance :

1.05Ohm

Factory Lead Time :

24 Weeks

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

55 mJ

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Rise Time :

70ns

Operating Mode :

ENHANCEMENT MODE

Current Rating :

-1A

Voltage - Rated DC :

-100V

Power Dissipation :

2W

ECCN Code :

EAR99

Continuous Drain Current (ID) :

1mA

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 500mA, 10V

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Length :

6.5mm

Turn On Delay Time :

9 ns

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Threshold Voltage :

-4V

Transistor Application :

SWITCHING

Terminal Position :

Dual

Width :

3.56mm

Pbfree Code :

yes

Lead Free :

Lead Free

FET Type :

P-Channel

Height :

1.6mm

Published :

2002

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

-100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-G4

Case Connection :

DRAIN

Element Configuration :

Single

Vgs (Max) :

±30V

Number of Pins :

3

Weight :

188mg

Pulsed Drain Current-Max (IDM) :

4A

Turn-Off Delay Time :

12 ns

Fall Time (Typ) :

30 ns

Terminal Form :

Gull wing

Contact Plating :

Tin

Transistor Element Material :

SILICON

Number of Terminations :

4

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Package / Case :

TO-261-4, TO-261AA

Power Dissipation-Max :

2W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)