FQT2P25TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

6.7mm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Drain Current-Max (Abs) (ID) :

0.55A

Element Configuration :

Single

Drain-source On Resistance-Max :

4Ohm

Weight :

188mg

Continuous Drain Current (ID) :

550mA

Package / Case :

TO-261-4, TO-261AA

Voltage - Rated DC :

-250V

Number of Pins :

4

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

Series :

QFET®

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

250V

FET Type :

P-Channel

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

4 Ω @ 275mA, 10V

Power Dissipation-Max :

2.5W Tc

Pulsed Drain Current-Max (IDM) :

2.2A

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Published :

2013

Factory Lead Time :

10 Weeks

Fall Time (Typ) :

25 ns

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

550mA Tc

Transistor Application :

SWITCHING

Width :

3.7mm

Height :

1.8mm

Rise Time :

40ns

Turn On Delay Time :

8.5 ns

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Drain to Source Breakdown Voltage :

-250V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Turn-Off Delay Time :

12 ns

Vgs (Max) :

±30V

Power Dissipation :

2.5W

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Current Rating :

-550mA

Terminal Form :

Gull wing

Radiation Hardening :

No