FQT2P25TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

550mA

FET Type :

P-Channel

Power Dissipation :

2.5W

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Pins :

4

Drain-source On Resistance-Max :

4Ohm

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

Series :

QFET®

Element Configuration :

Single

Number of Terminations :

4

Transistor Element Material :

SILICON

Radiation Hardening :

No

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-250V

Drain Current-Max (Abs) (ID) :

0.55A

Voltage - Rated DC :

-250V

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Vgs (Max) :

±30V

Terminal Form :

Gull wing

Length :

6.7mm

Weight :

188mg

Published :

2013

Pbfree Code :

yes

Turn On Delay Time :

8.5 ns

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

2.2A

Current Rating :

-550mA

Rise Time :

40ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Width :

3.7mm

Current - Continuous Drain (Id) @ 25°C :

550mA Tc

JESD-609 Code :

e3

Turn-Off Delay Time :

12 ns

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

4 Ω @ 275mA, 10V

Factory Lead Time :

10 Weeks

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Case Connection :

DRAIN

Package / Case :

TO-261-4, TO-261AA

Fall Time (Typ) :

25 ns

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.5W Tc

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Height :

1.8mm

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

250V