FQL50N40

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-264-3, TO-264AA

Packaging :

Tube

Power Dissipation-Max :

460W Tc

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Peak Reflow Temperature (Cel) :

Not Applicable

Terminal Finish :

MATTE TIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

50A

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

400V

JESD-609 Code :

e3

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

75m Ω @ 25A, 10V

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.075Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

50A Tc

FET Type :

N-Channel

DS Breakdown Voltage-Min :

400V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Pin Count :

3

Qualification Status :

COMMERCIAL

Vgs (Max) :

±30V

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pulsed Drain Current-Max (IDM) :

200A

Input Capacitance (Ciss) (Max) @ Vds :

7.5pF @ 25V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

1860 mJ

JESD-30 Code :

R-PSFM-T3