FQL40N50
- Mfr.Part #
- FQL40N50
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 40A TO264-3
- Stock
- 4,808
- In Stock :
- 4,808
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Current Rating :
- 40A
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 500V
- Fall Time (Typ) :
- 250 ns
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 40A Tc
- Turn On Delay Time :
- 140 ns
- Power Dissipation :
- 460W
- Lead Free :
- Lead Free
- Series :
- QFET®
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Height :
- 26mm
- Rise Time :
- 440ns
- Length :
- 20mm
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-264-3, TO-264AA
- Continuous Drain Current (ID) :
- 40A
- Input Capacitance (Ciss) (Max) @ Vds :
- 7500pF @ 25V
- Element Configuration :
- Single
- Factory Lead Time :
- 15 Weeks
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 20A, 10V
- Weight :
- 6.756g
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Width :
- 5mm
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Power Dissipation-Max :
- 460W Tc
- Turn-Off Delay Time :
- 350 ns
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Breakdown Voltage :
- 500V
- Packaging :
- Tube
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Case Connection :
- Isolated
- Datasheets
- FQL40N50

N-Channel Tube 110m Ω @ 20A, 10V ±30V 7500pF @ 25V 200nC @ 10V TO-264-3, TO-264AA
Description
The FQL40N50 is an N-Channel QFET? MOSFET, 500V, 40A, 110mΩ. Utilizing the exclusive planar stripe and DMOS technology of Fairchild Semiconductor, this N-Channel enhancement mode power MOSFET was created. This cutting-edge MOSFET technology has been specifically designed to offer excellent switching performance, high avalanche energy strength, and reduced on-state resistance. Switched-mode power supply, active power factor correction (PFC), and electronic lamp ballasts are all compatible with these products.
Features
-
40A, 500V, RDS(on)=110 mΩ(Max.)@VGS=10V, ID=20A
-
Low Gate Charge(Typ. 155 nC)
-
Low Crss(Typ. 95pF)
-
100% Avalanche Tested
-
Maximum Single Pulse Avalanche Energy (EAS)
Applications
-
Automotive electronics
-
As for switching devices in electronic control units
-
As power converters in modern electric vehicles
-
Solar inverters
-
Automotive applications
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FQL40N50F | onsemi | 20,087 | MOSFET N-CH 500V 40A TO264-3 |
| FQL40N50F | onsemi | 20,087 | MOSFET N-CH 500V 40A TO264-3 |
















