FQI8N60CTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain to Source Breakdown Voltage :

600V

Voltage - Rated DC :

600V

Mount :

Through Hole

JESD-30 Code :

R-PSIP-T3

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

16.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2013

Fall Time (Typ) :

64.5 ns

Power Dissipation-Max :

3.13W Ta 147W Tc

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Element Configuration :

Single

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Application :

SWITCHING

FET Type :

N-Channel

Series :

QFET®

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

230 mJ

Vgs (Max) :

±30V

Turn-Off Delay Time :

81 ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.75A, 10V

Current Rating :

8A

Pbfree Code :

yes

Factory Lead Time :

4 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1255pF @ 25V

Pulsed Drain Current-Max (IDM) :

30A

Continuous Drain Current (ID) :

7.5A

Power Dissipation :

3.13W

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Weight :

2.084g

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Packaging :

Tube

Number of Terminations :

3

Rise Time :

60.5ns

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V