FQI8N60CTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 3.75A, 10V

Drain to Source Breakdown Voltage :

600V

Gate to Source Voltage (Vgs) :

30V

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Turn On Delay Time :

16.5 ns

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Pbfree Code :

yes

JESD-609 Code :

e3

Weight :

2.084g

Fall Time (Typ) :

64.5 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Continuous Drain Current (ID) :

7.5A

Rise Time :

60.5ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Packaging :

Tube

JESD-30 Code :

R-PSIP-T3

Pulsed Drain Current-Max (IDM) :

30A

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

1255pF @ 25V

Avalanche Energy Rating (Eas) :

230 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

3.13W

Operating Temperature :

-55°C~150°C TJ

Current Rating :

8A

Element Configuration :

Single

Turn-Off Delay Time :

81 ns

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Published :

2013

Lead Free :

Lead Free

Number of Elements :

1

Vgs (Max) :

±30V

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Voltage - Rated DC :

600V

Power Dissipation-Max :

3.13W Ta 147W Tc