FQI6N50TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3.13W Ta 130W Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Reach Compliance Code :

Unknown

Series :

QFET®

Peak Reflow Temperature (Cel) :

Not Applicable

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Pbfree Code :

yes

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

22A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Packaging :

Tube

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

FET Type :

N-Channel

JESD-30 Code :

R-PSIP-T3

JESD-609 Code :

e3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

1.3 Ω @ 2.8A, 10V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Terminal Position :

Single

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

340 mJ

Drain Current-Max (Abs) (ID) :

5.5A

DS Breakdown Voltage-Min :

500V

Drain to Source Voltage (Vdss) :

500V