FQH8N100C

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Number of Terminations :

3

Series :

QFET®

Continuous Drain Current (ID) :

8A

Weight :

6.39g

Drain to Source Breakdown Voltage :

1kV

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate to Source Voltage (Vgs) :

30V

Length :

15.87mm

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

50 ns

Input Capacitance (Ciss) (Max) @ Vds :

3220pF @ 25V

Drain to Source Voltage (Vdss) :

1000V

ECCN Code :

EAR99

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

8A

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Height :

20.82mm

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-247AB

Rds On (Max) @ Id, Vgs :

1.45 Ω @ 4A, 10V

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Package / Case :

TO-247-3

Power Dissipation-Max :

225W Tc

Fall Time (Typ) :

80 ns

Turn-Off Delay Time :

122 ns

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Rise Time :

95ns

Published :

2013

Width :

4.82mm

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Through Hole

JESD-609 Code :

e3

Number of Pins :

3

Pbfree Code :

yes

Power Dissipation :

225W

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

850 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Tin (Sn)