FQH44N10

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Mfr.Part #
FQH44N10
Manufacturer
onsemi
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 100V 48A TO247-3
Stock
29,912
In Stock :
29,912

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
JEDEC-95 Code :
TO-247AB
Operating Temperature :
-55°C~175°C TJ
Surface Mount :
No
Drain Current-Max (Abs) (ID) :
48A
Mounting Type :
Through Hole
Vgs(th) (Max) @ Id :
4V @ 250µA
JESD-30 Code :
R-PSFM-T3
Reach Compliance Code :
not_compliant
Vgs (Max) :
±25V
Terminal Position :
Single
Transistor Application :
SWITCHING
Configuration :
SINGLE WITH BUILT-IN DIODE
Pbfree Code :
yes
Series :
QFET®
Packaging :
Tube
Drain to Source Voltage (Vdss) :
100V
Published :
2004
Power Dissipation-Max :
180W Tc
Pulsed Drain Current-Max (IDM) :
192A
Package / Case :
TO-247-3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
0.039Ohm
RoHS Status :
RoHS Compliant
Rds On (Max) @ Id, Vgs :
39m Ω @ 24A, 10V
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 25V
Avalanche Energy Rating (Eas) :
530 mJ
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
48A Tc
DS Breakdown Voltage-Min :
100V
Number of Terminations :
3
Qualification Status :
Not Qualified
Gate Charge (Qg) (Max) @ Vgs :
62nC @ 10V
Datasheets
FQH44N10
Introducing Transistors - FETs, MOSFETs - Single onsemi FQH44N10 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Terminations:3, FQH44N10 pinout, FQH44N10 datasheet PDF, FQH44N10 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQH44N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQH44N10


N-Channel Tube 39m Ω @ 24A, 10V ±25V 1800pF @ 25V 62nC @ 10V 100V TO-247-3

FQH44N10 Description


The FQH44N10 N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength. 



FQH44N10 Features


  • 48A, 100V, RDS(on) = 39mΩ(Max.) @VGS = 10 V, ID = 24A

  • Low gate charge ( Typ. 48nC)

  • Low Crss ( Typ. 85pF)

  • 100% avalanche tested

  • 175°C maximum junction temperature rating



FQH44N10 Applications


  • Other Industrial


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