FQH44N10
- Mfr.Part #
- FQH44N10
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 48A TO247-3
- Stock
- 29,912
- In Stock :
- 29,912
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-247AB
- Operating Temperature :
- -55°C~175°C TJ
- Surface Mount :
- No
- Drain Current-Max (Abs) (ID) :
- 48A
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JESD-30 Code :
- R-PSFM-T3
- Reach Compliance Code :
- not_compliant
- Vgs (Max) :
- ±25V
- Terminal Position :
- Single
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pbfree Code :
- yes
- Series :
- QFET®
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 100V
- Published :
- 2004
- Power Dissipation-Max :
- 180W Tc
- Pulsed Drain Current-Max (IDM) :
- 192A
- Package / Case :
- TO-247-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.039Ohm
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 39m Ω @ 24A, 10V
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Avalanche Energy Rating (Eas) :
- 530 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- DS Breakdown Voltage-Min :
- 100V
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 10V
- Datasheets
- FQH44N10

N-Channel Tube 39m Ω @ 24A, 10V ±25V 1800pF @ 25V 62nC @ 10V 100V TO-247-3
FQH44N10 Description
The FQH44N10 N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength.
FQH44N10 Features
-
48A, 100V, RDS(on) = 39mΩ(Max.) @VGS = 10 V, ID = 24A
-
Low gate charge ( Typ. 48nC)
-
Low Crss ( Typ. 85pF)
-
100% avalanche tested
-
175°C maximum junction temperature rating
FQH44N10 Applications
-
Other Industrial
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FQH44N10-F133 | onsemi | 28,013 | MOSFET N-CH 100V 48A TO247-3 |
















