FQE10N20CTU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

510pF @ 25V

Pulsed Drain Current-Max (IDM) :

16A

Power Dissipation-Max :

12.8W Tc

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-225AA, TO-126-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

200V

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

360m Ω @ 2A, 10V

JESD-30 Code :

R-PSFM-T3

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

4A

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Drain-source On Resistance-Max :

0.36ohm

Number of Elements :

1

Pin Count :

3

Qualification Status :

COMMERCIAL

Series :

QFET®

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Number of Terminations :

3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Avalanche Energy Rating (Eas) :

320 mJ

FET Type :

N-Channel

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

200V