FQD8P10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

6.6A Tc

Factory Lead Time :

4 Weeks

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

Mount :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Threshold Voltage :

-4V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

26.4A

Width :

6.1mm

Power Dissipation :

2.5W

Turn-Off Delay Time :

20 ns

Mounting Type :

Surface Mount

Rise Time :

110ns

Radiation Hardening :

No

Voltage - Rated DC :

-100V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Current Rating :

-6.6A

Height :

2.3mm

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

6.6A

Resistance :

530mOhm

Rds On (Max) @ Id, Vgs :

530m Ω @ 3.3A, 10V

Fall Time (Typ) :

35 ns

Length :

6.6mm

FET Type :

P-Channel

Number of Elements :

1

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 25V

Drain to Source Breakdown Voltage :

-100V

Vgs (Max) :

±30V

Series :

QFET®

Number of Pins :

3

Published :

2002

Drain to Source Voltage (Vdss) :

100V

Weight :

260.37mg

Transistor Application :

SWITCHING

Element Configuration :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Ta 44W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

11 ns