FMMTA56TA
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- Mfr.Part #
- FMMTA56TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A SOT23-3
- Stock
- 8,437
- In Stock ：
- 8,437
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 15 Weeks
- Lead Free :
- Lead Free
- Packaging :
- Cut Tape (CT)
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- Weight :
- 7.994566mg
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Current - Collector Cutoff (Max) :
- 100nA
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- -250mV
- Width :
- 1.3mm
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Power Dissipation :
- 330mW
- Number of Pins :
- 3
- Current Rating :
- -500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Position :
- Dual
- Frequency :
- 100MHz
- Pbfree Code :
- yes
- Height :
- 1mm
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 80V
- Length :
- 2.9mm
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Voltage - Rated DC :
- -80V
- Number of Elements :
- 1
- Continuous Collector Current :
- -500mA
- Base Part Number :
- FMMTA56
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 50
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- Max Power Dissipation :
- 330mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Published :
- 2006
- Max Collector Current :
- 500mA
- Emitter Base Voltage (VEBO) :
- -4V
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- FMMTA56TA
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMTA56TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -250mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -500mA.Keeping the emitter base voltage at -4V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
FMMTA56TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -4V
the current rating of this device is -500mA
a transition frequency of 100MHz
FMMTA56TA Applications
There are a lot of Diodes Incorporated
FMMTA56TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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