FMMT6520TA
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- Mfr.Part #
- FMMT6520TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 350V 0.5A SOT23-3
- Stock
- 299
- In Stock ：
- 299
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- Matte Tin (Sn) - annealed
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- -500mA
- Lead Free :
- Lead Free
- Published :
- 2002
- Gain Bandwidth Product :
- 50MHz
- Max Power Dissipation :
- 330mW
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- -1V
- Collector Emitter Breakdown Voltage :
- 350V
- Transistor Element Material :
- SILICON
- Height :
- 1mm
- REACH SVHC :
- No SVHC
- Base Part Number :
- FMMT6520
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Collector Current :
- 500mA
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Base Voltage (VCBO) :
- 350V
- Frequency :
- 50MHz
- Weight :
- 7.994566mg
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 350V
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Factory Lead Time :
- 15 Weeks
- Current Rating :
- -500mA
- Voltage - Rated DC :
- -350V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Transition Frequency :
- 50MHz
- Power Dissipation :
- 330mW
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Packaging :
- Cut Tape (CT)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Width :
- 1.4mm
- Collector Emitter Voltage (VCEO) :
- 350V
- ECCN Code :
- EAR99
- Length :
- 3.05mm
- Datasheets
- FMMT6520TA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT6520TA Overview
DC current gain in this device equals 20 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at -500mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -500mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 350V volts.In extreme cases, the collector current can be as low as 500mA volts.
FMMT6520TA Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 50MHz
FMMT6520TA Applications
There are a lot of Diodes Incorporated
FMMT6520TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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