FMMT6517TA
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- Mfr.Part #
- FMMT6517TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A SOT23-3
- Stock
- 8
- In Stock ：
- 8
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Transition Frequency :
- 50MHz
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 350V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Frequency :
- 50MHz
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Max Collector Current :
- 500mA
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 1V
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Voltage (VCEO) :
- 350V
- Length :
- 3.05mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Voltage - Rated DC :
- 350V
- Terminal Position :
- Dual
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 50MHz
- Continuous Collector Current :
- 500mA
- Number of Elements :
- 1
- Published :
- 2006
- ECCN Code :
- EAR99
- Height :
- 1mm
- JESD-609 Code :
- e3
- Width :
- 1.4mm
- Packaging :
- Cut Tape (CT)
- Current Rating :
- 500mA
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 330mW
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 350V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 330mW
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Weight :
- 7.994566mg
- Pbfree Code :
- yes
- Base Part Number :
- FMMT6517
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 350V
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Datasheets
- FMMT6517TA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT6517TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 50mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 5mA, 50mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 350V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
FMMT6517TA Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 50MHz
FMMT6517TA Applications
There are a lot of Diodes Incorporated
FMMT6517TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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