FMMT620TA
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- Mfr.Part #
- FMMT620TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 1.5A SOT23-3
- Stock
- 19,304
- In Stock ：
- 19,304
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 200mA 2V
- Continuous Collector Current :
- 1.5A
- Transition Frequency :
- 160MHz
- Weight :
- 7.994566mg
- Current :
- 15A
- Additional Feature :
- High Reliability
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 1.5A
- REACH SVHC :
- No SVHC
- Base Part Number :
- FMMT620
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 1.4mm
- Voltage :
- 80V
- Gain Bandwidth Product :
- 160MHz
- Length :
- 3.05mm
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 50mA, 1.5A
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 625mW
- Published :
- 2006
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 80V
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Pin Count :
- 3
- Factory Lead Time :
- 15 Weeks
- Voltage - Rated DC :
- 80V
- Current Rating :
- 1.5A
- Max Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Voltage (VCEO) :
- 80V
- Height :
- 1mm
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Power Dissipation :
- 806mW
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 160MHz
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 160mV
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 80V
- Datasheets
- FMMT620TA
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
FMMT620TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 200mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 160mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 50mA, 1.5A.Single BJT transistor is recommended to keep the continuous collector voltage at 1.5A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 1.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 160MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.
FMMT620TA Features
the DC current gain for this device is 300 @ 200mA 2V
a collector emitter saturation voltage of 160mV
the vce saturation(Max) is 200mV @ 50mA, 1.5A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 160MHz
FMMT620TA Applications
There are a lot of Diodes Incorporated
FMMT620TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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