FMMT593TA
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- Mfr.Part #
- FMMT593TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A SOT23-3
- Stock
- 2,099
- In Stock ：
- 2,099
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Power Dissipation :
- 500mW
- Voltage :
- 100V
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- -7V
- Max Breakdown Voltage :
- 100V
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- -100V
- Max Collector Current :
- -1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- -300mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- -100V
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- -1A
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 500mA
- Width :
- 1.4mm
- Packaging :
- Cut Tape (CT)
- Weight :
- 7.994566mg
- Height :
- 1.1mm
- Gain Bandwidth Product :
- 50MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- FMMT593
- hFE Min :
- 100
- Max Junction Temperature (Tj) :
- 150°C
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- -100V
- Polarity/Channel Type :
- PNP
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 50MHz
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Length :
- 3mm
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 50MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Current :
- 1A
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Max Power Dissipation :
- 500mW
- Current Rating :
- -1A
- Collector Base Voltage (VCBO) :
- -120V
- Published :
- 1997
- Datasheets
- FMMT593TA
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT593TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 5V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.If the emitter base voltage is kept at -7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as -1A volts at its maximum.
FMMT593TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at -7V
the current rating of this device is -1A
a transition frequency of 50MHz
FMMT593TA Applications
There are a lot of Diodes Incorporated
FMMT593TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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