FMMT549TA
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- Mfr.Part #
- FMMT549TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A SOT23-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Collector Emitter Saturation Voltage :
- -250mV
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Power Dissipation :
- 500mW
- Number of Terminations :
- 3
- Weight :
- 7.994566mg
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.1mm
- Collector Base Voltage (VCBO) :
- 35V
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 15 Weeks
- Base Part Number :
- FMMT549
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Max Collector Current :
- 1A
- Mounting Type :
- Surface Mount
- Length :
- 3mm
- Width :
- 1.4mm
- Voltage - Rated DC :
- -30V
- Packaging :
- Cut Tape (CT)
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 200mA, 2A
- Current Rating :
- -1A
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Continuous Collector Current :
- -1A
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 100MHz
- Max Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 500mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 30V
- Polarity/Channel Type :
- PNP
- Published :
- 2012
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Frequency :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- FMMT549TA
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT549TA Overview
In this device, the DC current gain is 100 @ 500mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -250mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 200mA, 2A.A -1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
FMMT549TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 750mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
FMMT549TA Applications
There are a lot of Diodes Incorporated
FMMT549TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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