FMMT549ATA
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- Mfr.Part #
- FMMT549ATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A SOT23-3
- Stock
- 44,287
- In Stock ：
- 44,287
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1A
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Collector Current :
- -1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- -30V
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 30V
- Radiation Hardening :
- No
- Published :
- 2012
- Max Breakdown Voltage :
- 30V
- Power Dissipation :
- 500mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 100mA
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 500mA 2V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 500mW
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- -500mV
- Gain Bandwidth Product :
- 100MHz
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 35V
- Length :
- 3mm
- Number of Terminations :
- 3
- Height :
- 1.1mm
- Packaging :
- Cut Tape (CT)
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 1.4mm
- Frequency :
- 100MHz
- Weight :
- 7.994566mg
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Base Part Number :
- FMMT549A
- Transistor Application :
- SWITCHING
- Current Rating :
- -1A
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 15 Weeks
- Datasheets
- FMMT549ATA
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT549ATA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 500mA 2V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 1mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 1A volts at its maximum.
FMMT549ATA Features
the DC current gain for this device is 150 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 300mV @ 1mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
FMMT549ATA Applications
There are a lot of Diodes Incorporated
FMMT549ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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