FMMT417TD
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- Mfr.Part #
- FMMT417TD
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 0.5A SOT23-3
- Stock
- 2,758
- In Stock ：
- 2,758
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Matte Tin (Sn)
- Current Rating :
- 500mA
- Packaging :
- Cut Tape (CT)
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 330mW
- Power Dissipation :
- 330mW
- Transistor Type :
- NPN - Avalanche Mode
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Published :
- 2006
- Weight :
- 7.994566mg
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 1.4mm
- Radiation Hardening :
- No
- Continuous Collector Current :
- 500mA
- Length :
- 3mm
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Base Part Number :
- FMMT417
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 1mA, 10mA
- Pbfree Code :
- yes
- Height :
- 1.1mm
- Collector Emitter Voltage (VCEO) :
- 100V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity :
- NPN
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- 500mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- Frequency :
- 40MHz
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Max Collector Current :
- 500mA
- Collector Base Voltage (VCBO) :
- 320V
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 100V
- Gain Bandwidth Product :
- 40MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 10mA 10V
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 100V
- Transition Frequency :
- 40MHz
- Number of Terminations :
- 3
- Datasheets
- FMMT417TD
NPN - Avalanche Mode -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
FMMT417TD Overview
In this device, the DC current gain is 25 @ 10mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 1mA, 10mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 40MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
FMMT417TD Features
the DC current gain for this device is 25 @ 10mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
FMMT417TD Applications
There are a lot of Diodes Incorporated
FMMT417TD applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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